Buy Fluid Mechanics 9th Edition by Frank M. White PDF ebook by author Frank M. White – published by McGraw-Hill Higher Education in 2021 and save up to 80% compared to the print version of this textbook. With PDF version of this textbook, not only save you money, you can also highlight, add text, underline add post-it notes, bookmarks to pages, instantly search for the major terms or chapter titles, etc.
You can search our site for other versions of the Fluid Mechanics 9th Edition by Frank M. White PDF ebook. You can also search for others PDF ebooks from publisher McGraw-Hill Higher Education, as well as from your favorite authors. We have thousands of online textbooks and course materials (mostly in PDF) that you can download immediately after purchase.
Note: e-textBooks do not come with access codes, CDs/DVDs, workbooks, and other supplemental items.
eBook Details:
Full title: Fluid Mechanics 9th Edition by Frank M. White
Edition: 9th
Copyright year: 2021
Publisher: McGraw-Hill Higher Education
Author: Frank M. White
ISBN: 9781260258318, 9781000527445
Format: PDF
Description of Fluid Mechanics 9th Edition by Frank M. White:
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.